4,6,8inch Silisyòm Wafer Envantè Mizajou _202506

Jun 20, 2025 Kite yon mesaj

Pil	Produi	Dyamèt	Kristal	Tipe	Dopan	Oryantasyon	Epesè	Rezistivite
501061S	Al	200	Akò	P	B	100	725±25	1~100	200-300 yon ti ki te swiv pa 8000A PVD sputtered al-Cu 0.5%
501201	Epitaksyal	200	Akò	P	B	100	700~750	<0.1	P/b t1 ~ 50/r1 ~ 50, mfg 22- Me -2024
501202	Epitaksyal	200	Akò	N	PH wouj	100	700~750	0~0.05	N/pH T1 ~ 10/R0.01 ~ 1, Mfg 27- Me -2024
522101	Poli	200	Akò	P	B	100	710~740	0.01~0.02
522102	Poli	200	Akò	P	B	100	710~740	0.009~0.02
522103	Poli	200	Akò	P	B	100	710~740	0.015~0.02
522104	Poli	200	Akò	P	B	100	705~745	0.014~0.022
522105	Poli	200	Akò	P	B	100	710~740	0.014~0.02
522106	Poli	200	Akò	P	B	100	725±15	0.001~0.003
522107	Poli	200	Akò	P	B	100	710~740	0.0025~0.0035
522108	Poli	200	Akò	P	B	100	725±15	0.005~0.01
522109	Poli	200	Akò	P	B	100	710~740	0.002~0.0033
522110	Poli	200	Akò	P	B	100	725±15	0.0035~0.004
522111	Poli	200	Akò	P	B	100	640±13	0.012~0.0175	Lto+nolm
522112	Poli	200	N	N	Tankou	100	725±15	0.001~0.003
522113	Poli	200	Akò	P	B	111	725±15	0.005~0.01
522114	Poli	200	Akò	P	B	100	725±50	1~65
522115	Poli	200	Akò	P	B	100	725±15	Mwens pase oswa egal a 40
522116	Poli	200	Akò	P	B	100	725±15	0.002~0.003
522117	Poli	200	Akò	P	B	100	710~740	0.0033~0.005
522118	Poli	200	Akò	P	B	100	725±15	0.003~0.004
522119	Poli	200	Akò	P	B	100	725±15	0.001~0.003
522120	Poli	200	Akò	P	B	111	725±20	0.002~0.005
522121	Poli	200	Akò	P	B	100	725±15	0.003~0.0035
522122	Poli	200	Akò	P	B	100	725±15	0.008~0.02
522123	Poli	200	Akò	P	B	100	725±15	0.0023~0.004
522124	Grave	200	N	N	N	N	745	N	Lto+nolm
522125	Poli	200	Akò	P	B	100	705~745	0.01~0.02	Lto+nolm
SO617PRAU	Sputtered au	150	Akò	P	B	100	500±15	10~25	Sputtered ti30nm+au100nm
PS241025006	SOI	200	Akò	P	B	100	650±5	8~12	Aparèy: 30 ± 0 . 5μm, 0.01 ~ 0.02 ohm.cm / bwat: 1 ± 0.1μm, dan<110>
503141	Poli	100	Akò	P	B	110	20000±100	1~100
PS250407006	SOI	200	Akò	N	Ph	100	725±10	1~10	Aparèy: 2 ± 0.5μm / bwat: 1000nm ± 5%
PS250407007	SOI	200	Akò	N	Ph	100	725±10	1~10	Aparèy: 10 ± 0.5μm / bwat: 1000nm ± 5%
PS250407008	SOI	200	Akò	N	Ph	100	725±10	1~10	Aparèy: 3 ± 0.5μm / bwat: 1000nm ± 5%
505061	Jgs1	100					555±7		DSP, sq ＜ 0.5nm, 10/5, TTV<5μm, Flat 32.5mm
505301	Oksid+nitride	200	Akò	P	B	100	725±25	1~100	3μm oksid tèmik +300 nm LPCVD nitride
203171pw3pt	Sputtered PT	150	Akò	N	Ph	100	675±25	0.001~0.005	3000A oksid tèmik+ti50nm+pt 200nm
506162	Poli	200	Akò	N	Ph	100	700~750	1000~12000	N/pH T1 ~ 10/R0.01 ~ 1, Mfg 27- Me -2024