4,6,8 pous Silisyòm Wafer Mizajou Envantè_20240311 SOI

Mar 12, 2024 Kite yon mesaj

ANPIL	PWODWI	DYAMET	KRISTAL	TIP	DOPANT	ORYANTASYON	Epesè	RESISTIVITE
G8P131	DONK MWEN	200	CZ	P	B	100	725±15	14~19	Aparèy: 55±7.5nm, 8 ~ 12 ohm.cm / Bwat: 145±10nm, Notch<110>
C19404-3-2	DONK MWEN	200	CZ	nati	nati	100	725±15	>750	Aparèy: 210 ~ 230nm, 8 ~ 12 ohm.cm / Bwat: 2950 ~ 3050nm
G8P238S	DONK MWEN	200	CZ	P	B	100	725±15	14~19	Aparèy: 200 ~ 240nm, 8 ~ 12 ohm.cm / Bwat: 1950 ~ 2050nm
G8P217	DONK MWEN	200	CZ	nati	nati	100	725±15	>750	Aparèy: 210 ~ 230nm, P<100>, 8 ~ 12 ohm.cm / Bwat : 1950 ~ 2050nm
G8P500	DONK MWEN	200	CZ	P	B	100	725±15	8~12	Aparèy: 500±50nm / Bwat: 2950 ~ 3050nm, Oryantasyon Notch<110>
G8P600	DONK MWEN	200	CZ	P	B	100	725±15	8~12	Aparèy: 600±60nm / Bwat: 2950 ~ 3050nm, Oryantasyon Notch<110>
G8P340	DONK MWEN	200	CZ	P	B	100	725±15	8~12	Aparèy: 340±25nm / Bwat: 2900 ~ 3100nm, Oryantasyon Notch<110>
G8P288	DONK MWEN	200	CZ	P	B	100	725±15	>1000	Aparèy: 145±12.5nm, 8 ~ 12 ohm.cm / Bwat: 400±25nm, Notch<110>
G8M107	DONK MWEN	200	CZ	N	Ph	100	725±15	0.3~1.2	Aparèy: 1500±80nm, P/B<100>, 14 ~ 22 ohm-cm / Bwat: 950 ~ 1050nm, Notch<100>
230300058	DONK MWEN	150	CZ	P	B	100	450±5	1~10	Aparèy: 15μm±0.5μm P 0.01 ~ 0.02 / Bwat: 5μm±5%, DSP
1511032	DONK MWEN	100	CZ	N		100	475±25	nati	Aparèy: 20μm±0.5 N 0.001~0.02 / Bwat: 15μm±3%
G8N70	DONK MWEN	200	CZ	N	Ph	100	725±10	1~10	Aparèy: 70μm±5% / Bwat: 1000nm±5%
G8K00318	DONK MWEN	200	CZ	P	B	100	625±10	>1000	Aparèy: 1.5±0.5μm,<0.02 ohm.cm / Box : 2μm±5%
A0210	DONK MWEN	200	CZ	P	B	100	725±15	8.5~11.5	Aparèy: 1250±100nm / Bwat: 400±40nm
112301	DONK MWEN	100	CZ	N	Sb	100	300	0.005~0.025	Aparèy: 30μm / Bwat: 0.5μm
G6P163S	DONK MWEN	150	CZ	P	B	100	675±15	10~20	Aparèy: 200 ~ 240nm, 10 ~ 20 ohm.cm / Bwat: 2850 ~ 3150nm